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Native
defects |
Gallium nitride
(GaN) is an outstanding material for semiconductor light emitters in the
blue-green and UV region of the spectrum (see Blue Laser Diodes). We have
been engaged in theoretical efforts to address some of the most important
issues that hamper technological applications of this material. Our tools
in these investigations are state-of-the-art first-principles calculations
based on pseudopotentials and density-functional theory. This work was
performed by Chris Van de Walle in collaboration with Jörg Neugebauer,
Catherine Stampfl, and Sukit Limpijumnong, with sponsorship by DARPA, ONR,
and AFOSR.
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