LIST OF PUBLICATIONS AND PRESENTATIONS

Chris G. Van de Walle

 

Journal Articles

  1. “The significance of interference effects in thin film Cu2S/CdS solar cells”, C. Van de Walle and P. De Visschere, Solar Cells 9, 353 (1983).
  2. “Theoretical study of Si/Ge interfaces”, C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B 3, 1256 (1985).
  3. “Theoretical calculations of heterojunction discontinuities in the Si/Ge system”, C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
  4. “Theoretical calculations of semiconductor heterojunction discontinuities”, C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B4, 1055 (1986).
  5. “Theoretical study of band offsets at semiconductor interfaces”, C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8154 (1987).
  6. “Band offsets at interfaces between HgTe, CdTe, and InSb”, C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B5, 1225 (1987).
  7. “Strain and the interpretation of band-lineup measurements”, J. Tersoff and C. G. Van de Walle, Phys. Rev. Lett. 59, 946 (1987).
  8. “Comment on “Heterojunction valence-band-discontinuity dependence on face orientation” “ C. G. Van de Walle and R. M. Martin, Phys. Rev. B 37, 4801 (1988).
  9. “Theoretical investigations of fluorine-silicon systems”, C. G. Van de Walle, Y. Bar-Yam, F. R. McFeely, and S. T. Pantelides, J. Vac. Sci. Technol. A 6, 1973 (1988).
  10. “Theory of hydrogen diffusion and reactions in crystalline silicon”, C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. Lett. 60, 2761 (1988).
  11. “Optical characterization and band offsets in ZnSe-ZnSxSe1-x strained-layer superlattices”, K. Shahzad, D. J. Olego, and C. G. Van de Walle, Phys. Rev. B 38, 1417 (1988); 43, 1830 (1991) (E).
  12. “Strained-layer interfaces between II-VI compound semiconductors”, C. G. Van de Walle, K. Shahzad, and D. J. Olego, J. Vac. Sci. Technol. B 6, 1350 (1988).
  13. “Fluorine-silicon reactions and the etching of crystalline silicon”, C. G. Van de Walle, F. R. McFeely, and S. T. Pantelides, Phys. Rev. Lett. 61, 1867 (1988).
  14. “Band lineups and deformation potentials in the model-solid theory”, C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
  15. “Mechanisms of equilibrium and nonequilibrium diffusion of dopants in silicon”, C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. Lett. 62, 1049 (1989).
  16. “Electronic properties of the (100) Si/Ge strained-layer superlattices”, S. Satpathy, R. M. Martin, and C. G. Van de Walle, Phys. Rev. B 38, 13237 (1988).
  17. “Atomic and electronic structure of Si-Ge superlattices”, C. G. Van de Walle, Phys. Rev. Lett. 62, 974 (1989).
  18. “Structure and properties of hydrogen-impurity pairs in elemental semiconductors”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. Lett. 62, 1884 (1989).
  19. “ “Absolute” deformation potentials: formulation and ab initio calculations for semiconductors”, C. G. Van de Walle and R. M. Martin, Phys. Rev. Lett. 62, 2028 (1989).
  20. “Theory of hydrogen diffusion and reactions in crystalline silicon”, C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. B 39, 10791 (1989).
  21. “Microscopic structure of the hydrogen-boron complex in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. B 39, 10809 (1989).
  22. “Microscopic structure of the hydrogen-phosphorous complex in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. B 41 3885 (1990) (RC).
  23. “Properties of hydrogen in crystalline silicon under compression and tension”, C. S. Nichols, D. R. Clarke, and C. G. Van de Walle, Phys. Rev. Lett. 63, 1090 (1989).
  24. “Mechanisms of dopant impurity diffusion in silicon”, C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. B 40, 5484 (1989).
  25. “Structural identification of hydrogen and muonium centers in silicon: First-principles calculations of hyperfine parameters”, C. G. Van de Walle, Phys. Rev. Lett. 64, 669 (1990).
  26. “First-principles calculations of diffusion coefficients: hydrogen in silicon”, P. E. Blöchl, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. Lett. 64, 1401 (1990).
  27. “Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlattices”, K. Shahzad, D. J. Olego, C. G. Van de Walle, and D. A. Cammack, J. Lumin. 46, 109 (1990).
  28. “Theoretical aspects of hydrogen in crystalline semiconductors”, C. G. Van de Walle, Physica B 170, 21 (1991).
  29. “Role of native defects in wide band-gap semiconductors”, D. B. Laks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, Phys. Rev. Lett. 66, 648 (1991).
  30. “Atomic and electronic structure of CaSi2/Si interfaces”, C. G. Van de Walle, Phys. Rev. B 43, 11913 (1991).
  31. “Theory of defects, impurities, and doping in ZnSe”, C. G. Van de Walle and D. B. Laks, J. Lumin. 52, 1 (1992).
  32. “Native defects and self-compensation in ZnSe”, D. B. Laks, C. G. Van de Walle, G. F. Neumark, P. E. Blöchl, and S. T. Pantelides, Phys. Rev. B 45, 10965 (1992).
  33. “First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe”, C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, Phys. Rev. B 47, 9425 (1993).
  34. “Solubilities, defect reactions, and doping limits in ZnSe”, C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, Journ. Crystal Growth 117, 704 (1992).
  35. “First-principles calculations of hyperfine parameters”, C. G. Van de Walle and P. E. Blöchl, Phys. Rev. B 47, 4244 (1993).
  36. “Spin-polarized calculations and hyperfine parameters for hydrogen and muonium in GaAs”, C. G. Van de Walle and L. Pavesi, Phys. Rev. B 47, 4256 (1993).
  37. “Doping limits in ZnSe”, D. B. Laks and C. G. Van de Walle, Physica B 185, 118 (1993).
  38. “First-principles investigation of visible light emission from silicon-based materials”, C. G. Van de Walle and J. E. Northrup, Phys. Rev. Lett. 70, 1116 (1993).
  39. “Acceptor doping in ZnSe versus ZnTe”, D. B. Laks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, Appl. Phys. Lett. 63, 1375 (1993).
  40. “Energies of various configurations of hydrogen in silicon”, C. G. Van de Walle, Phys. Rev. B 49, 4579 (1994); ibid. 58, 1689 (1998) (Erratum).
  41. “Structure, energetics, and dissociation of Si-H bonds at dangling bonds in silicon”, C. G. Van de Walle and R. A. Street, Phys. Rev. B 49, 14 766 (1994) (RC).
  42. “Silicon-hydrogen bonding and hydrogen diffusion in amorphous silicon”, C. G. Van de Walle and R. A. Street, Phys. Rev. B 51, 10 615 (1995).
  43. “Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon”, N. H. Nickel, N. M. Johnson, and C. G. Van de Walle, Phys. Rev. Lett. 72, 3393 (1994).
  44. “Energetics of bond-centered hydrogen in strained Si-Si bonds”, C. G. Van de Walle and N. H. Nickel, Phys. Rev. B 51, 2636 (1995) (RC).
  45. “Inverted order of acceptor and donor levels of monatomic hydrogen in silicon”, N. M. Johnson, C. Herring, and C. G. Van de Walle, Phys. Rev. Lett. 73, 130 (1994); 74, 1889 (1995) (erratum).
  46. Comment on “Electron paramagnetic resonance of molecular hydrogen in silicon”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, and E. H. Poindexter, Phys. Rev. Lett. 73, 1456 (1994).
  47. “Atomic geometry and electronic structure of native defects in GaN”, J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 50, 8067 (1994) (RC).
  48. “Nitrogen doping in ZnTe and ZnSe”, C. G. Van de Walle and D. B. Laks, Solid State Communications 93, 447 (1995).
  49. “Electronic structure and phase stability of GaAs1-xNx alloys”, J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 51, 10 568 (1995).
  50. “Band discontinuities at heterojunctions between crystalline and amorphous silicon”, C. G. Van de Walle and L. H. Yang, J. Vac. Sci. Technol. B 13, 1635 (1995).
  51. “Hydrogen in GaN: novel aspects of a common impurity”, J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
  52. “Native defects and impurities in GaN”, J. Neugebauer and C. G. Van de Walle, in Festkörperprobleme/Advances in Solid State Physics, Vol. 35, ed. by R. Helbig (Vieweg, Braunschweig/Wiesbaden, 1996), p. 25.
  53. Reply to “Comment on 'Inverted order of acceptor and donor levels of monatomic hydrogen in silicon”', N. M. Johnson, C. Herring, and C. G. Van de Walle, Phys. Rev. Lett. 74, 4566 (1995).
  54. “ 'Stretched exponential' relaxation modeled without invoking statistical distributions”, C. G. Van de Walle, Phys. Rev. B. 53, 11292 (1996).
  55. “Defects, impurities and doping levels in wide-band-gap semiconductors”, C. G. Van de Walle and J. Neugebauer, Brazilian Journal of Physics 26, 163 (1996).
  56. “Hydrogen interactions with self-interstitials in silicon”, C. G. Van de Walle and J. Neugebauer, Phys. Rev. B 52, R14 320 (1995) (RC).
  57. “Atomic arrangement at the AlN/SiC interface”, F. A. Ponce, C. G. Van de Walle, and J. E. Northrup, Phys. Rev. B 53, 7473 (1996).
  58. “Role of hydrogen in doping of GaN”, J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996).
  59. “Gallium vacancies and the yellow luminescence in GaN”, J. Neugebauer and Chris G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996).
  60. “Comment on `Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing' “, Chris G. Van de Walle and W. B. Jackson, Appl. Phys. Lett. 69, 2441 (1996).
  61. “Clean and As-covered zinc-blende GaN (001) surfaces: novel structures and surfactant behavior”, J. Neugebauer, T. Zywietz, M. Scheffler, J. E. Northrup, and Chris G. Van de Walle, Phys. Rev. Lett. 80, 3097 (1998).
  62. “Comment on “ Surface silicon-deuterium bond energy from gas-phase equilibration”, C. Herring and C. G. Van de Walle, Phys. Rev. B. 55, 13 314 (1997).
  63. “Small valence-band offsets at GaN/InGaN heterojunctions”, Chris G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997).
  64. “Defects and doping in GaN”, Chris G. Van de Walle, Braz. J. Phys. 27/A, 74 (1997).
  65. “Interactions of hydrogen with native defects in GaN”, Chris G. Van de Walle, Phys. Rev. B 56, R10 020 (1997).
  66. “Hydrogen states in silicon”, Chris G. Van de Walle, J. Non-Cryst. Solids 227-230, 111 (1998).
  67. “DX center formation in wurtzite and zinc-blende AlGaN”, Chris G. Van de Walle, Phys. Rev. B 57, 2033 (1998).
  68. “Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors”, Chris G. Van de Walle, Phys. Rev. Lett. 80, 2177 (1998).
  69. “Doping of AlxGa1-xN”, C. Stampfl and Chris G. Van de Walle, Appl. Phys. Lett. 72, 459 (1998).
  70. “Theory of doping and defects in III-V nitrides”, Chris G. Van de Walle, C. Stampfl, and J. Neugebauer, J. Cryst. Growth 189/190, 505 (1998).
  71. “Chemical trends for acceptor impurities in GaN”, J. Neugebauer and Chris G. Van de Walle, J. Appl. Phys. 85, 3003 (1999).
  72. “Hydrogen in silicon: fundamental properties and consequences for devices”, Chris G. Van de Walle, J. Vac. Sci. Technol. A 16, 1767 (1998).
  73. “Energetics and electronic structure of stacking faults in AlN, GaN, and InN”, C. Stampfl and Chris G. Van de Walle, Phys. Rev. B 57, R15052 (1998).
  74. “Metastability of oxygen donors in AlGaN”, M. D. McCluskey, N. M. Johnson, Chris G. Van de Walle, D. P. Bour, M. Kneissl, and W. Walukiewicz, Phys. Rev. Lett. 80, 4008 (1998).
  75. “Characteristics of InGaN/AlGaN multiple quantum well laser diodes”, D. P. Bour, M. Kneissl, L. T. Romano, M. McCluskey, C. G. Van de Walle, B. S. Krusor, R. Donaldson, J. Walker, C. Dunnrowicz, and N. M. Johnson, IEEE J. Select. Topics Quantum Electron. 4, 498 (1998).
  76. “Large band-gap bowing of InxGa1-xN alloys”, M. D. McCluskey, C. G. Van de Walle, C. P. Master, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett. 72, 2725 (1998).
  77. “Surface structures, surfactants and diffusion at cubic and wurtzite GaN”, T. K. Zywietz, J. Neugebauer, M. Scheffler, J. E. Northrup, and C. G. Van de Walle, MRS Internet Journal for Nitride Research 3, 26 (1998).
  78. “First-principles study of native point defects in ZnO”, A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
  79. “Exchange of deeply trapped and interstitial hydrogen in silicon”, B. Tuttle, C. G. Van de Walle, and J. B. Adams, Phys. Rev. B 59, 5493 (1999).
  80. “MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes”, D. P. Bour, M. Kneissl, D. Hofstetter, L. T. Romano, M. McCluskey, C. G. Van de Walle, B. S. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, and N. M. Johnson, Materials Science and Engineering B 59, 33 (1999).
  81. “Doping of AlxGa1-xN alloys”, C. Stampfl, J. Neugebauer, and Chris G. Van de Walle, Materials Science and Engineering B 59, 253 (1999).
  82. “Large and composition-dependent band-gap bowing in InxGa1-xN alloys”, Chris G. Van de Walle, M. D. McCluskey, C. P. Master, L. T. Romano, and N. M. Johnson, Materials Science and Engineering B 59, 274 (1999).
  83. “Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors”, Chris G. Van de Walle and J. Goss, Materials Science and Engineering B 58, 17 (1999).
  84.  “Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon”, B. Tuttle and Chris G. Van de Walle, Phys. Rev. B. 59, 12884 (1999).
  85. “Density-functional calculations for III-V nitrides using the local density approximation and the generalized gradient approximation”, C. Stampfl and C. G. Van de Walle, Phys. Rev. B 59, 5521 (1999).
  86. “Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials'', C. Stampfl, C. G. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann, Phys. Rev. B 61, R7846 (2000).
  87. “DX centers in AlGaN”, M. D. McCluskey, C. G. Van de Walle, N. M. Johnson, D. P. Bour, and M. Kneissl, Int. J. Modern Physics B 13, 1363 (1999).
  88. “Defects and defect reactions in semiconductor nitrides'', Chris G. Van de Walle, J. Neugebauer, C. Stampfl, M. D. McCluskey, and N. M. Johnson, Acta Physica Polonica A 96, 613 (1999).
  89. “Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure”, M. Kneissl, D. P. Bour, C. G. Van de Walle, L. T. Romano, J. E. Northrup, R. M. Wood, M. Teepe, and N. M. Johnson, Appl. Phys. Lett. 75, 581 (1999).
  90. “Arsenic impurities in GaN”, Chris G. Van de Walle and J. Neugebauer, Appl. Phys. Lett. 76, 1009 (2000).
  91. “Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure”, M. Kneissl, D. P. Bour, C. G. Van de Walle, L. T. Romano, J. E. Northrup, R. M. Wood, M. Teepe, T. Schmidt, and N. M. Johnson, Phys. Status Solidi (a) 176, 49 (1999).
  92. “Design and performance of asymmetric waveguide nitride laser diodes”, D. P. Bour, M. Kneissl, C. G. Van de Walle, G. A. Evans, L. T. Romano, J. E. Northrup, M. Teepe, R. M. Wood, T. Schmidt, and N. M. Johnson, IEEE J. Quantum Electron. 36, 184 (2000).
  93. “Performance and optical gain characteristic of InGaN MQW laser diodes”, M. Kneissl, C. G. Van de Walle, D. P. Bour, L. T. Romano, L. L. Goddard, C. P. Master, J. E. Northrup, and N. M. Johnson, Journal of Luminescence 87-89, 135 (2000).
  94. “Effect of Si doping on the strain and defect structure of GaN thin films”, L. T. Romano, C. G. Van de Walle, B. S. Krusor, R. Lau, J. Ho, T. Schmidt, J. W. Ager III, W. Götz, and R. S. Kern, Physica B 273-274, 50 (1999).
  95. “Microscopic theory of hydrogen in silicon devices”, Chris G. Van de Walle and B. Tuttle, IEEE Transactions on Electron Devices 47, 17 (2000).
  96. “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures”, L.T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski, and J. Jun, Appl. Phys. Lett. 75, 3950 (1999).
  97. “Hydrogen as a cause of doping in ZnO”, Chris G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
  98. “The effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition”, L. T. Romano, C. G. Van de Walle, J. W. Ager III, W. Götz, and R. S. Kern, J. Appl. Phys. 87, 7745 (2000).
  99. “Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates”, D. P. Bour, N. M. Nickel, C. G. Van de Walle, M. S. Kneissl, B. S. Krusor, Ping Mei, and N. M. Johnson, Appl. Phys. Lett. 76, 2182 (2000).

100. “Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates'', M. Kneissl, D. P. Bour, L. T. Romano, C. G. Van de Walle, J. E. Northrup, W. S. Wong, D. W. Treat, M. Teepe, T. Schmidt, and N. M. Johnson, Appl. Phys. Lett. 77, 1931 (2000).

101. “Magnesium incorporation in GaN grown by molecular-beam epitaxy”, A. J. Ptak, T. H. Myers, L. T. Romano, C. G. Van de Walle, and J. E. Northrup, Appl. Phys. Lett. 78, 285 (2001).

102. “First-principles studies of beryllium doping of GaN”, C. G. Van de Walle, S. Limpijumnong, and J. Neugebauer, Phys. Rev. B 63, 245205 (2001).

103. “Energy levels of isolated interstitial hydrogen in silicon”, C. Herring, N. M. Johnson, and Chris G. Van de Walle, Phys. Rev. B 64,125209 (2001).

104. “Entropy-driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaN”, S. Limpijumnong, C. G. Van de Walle, and J. E. Northrup, Phys. Rev. Lett. 87, 205505 (2001).

105. “Influence of microstucture on the carrier concentration of Mg-doped GaN films”, L. T. Romano, M. Kneissl, J. E. Northrup, C. G. Van de Walle, and D. W. Treat, Appl. Phys. Lett. 79, 2734 (2001).

106. “First-principles surface phase diagram for hydrogen on GaN surfaces”, C. G. Van de Walle and J. Neugebauer, Phys. Rev. Lett. 88, 66103 (2002).

107. “Passivation and doping due to hydrogen in III-nitrides”, S. Limpijumnong and Chris G. Van de Walle, phys. stat. sol. (b) 228, 303 (2001).

108. “Strategies for controlling the conductivity of wide-band-gap semiconductors”, Chris G. Van de Walle, phys. stat. sol. (b) 229, 221 (2002).

109. “Defect analysis and engineering in ZnO”, Chris G. Van de Walle, Physica B 308-310, 899 (2001).

110. “Theoretical investigation of native defects, impurities and complexes in AlN”, C. Stampfl and C. G. Van de Walle, Phys. Rev. B 65, 155212 (2002).

111. “Band gap changes of GaN shocked to 13 GPa”, M. D. McCluskey, Y. M. Gupta, C. G. Van de Walle, D. P. Bour, M. Kneissl, and N. M. Johnson, Appl. Phys. Lett. 80, 1912 (2002).

112. “Quantitative analysis of the polarization fields and absorption changes in InGaN/Gan quantum wells with electroabsorption spectroscopy”, F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. Van de Walle, and N. M. Johnson, Appl. Phys. Lett. 81, 490 (2002).

113. “Role of hydrogen in surface reconstructions and growth of GaN”, C. G. Van de Walle and J. Neugebauer, J. Vac. Sci. Technol. B 20, 1640 (2002).

114. “Effects of hydrogen on the electronic properties of dilute GaAsN alloys”, A. Janotti, S. B. Zhang, Su-Huai Wei, and C. G. Van de Walle, Phys. Rev. Lett. 89, 086403 (2002).

115. “Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy”, E. V. Lavrov, J. Weber, F. Börrnert, Chris G. Van de Walle, and R. Helbig, Phys. Rev. B 66, 165205 (2002).

116. “Structure and energetics of nitride surfaces under MOCVD growth conditions”, C. G. Van de Walle and J. Neugebauer, J. Cryst. Growth 248, 8 (2003).

117. “Hydrogen as a shallow center in semiconductors and oxides”, C. G. Van de Walle, phys. stat. sol. (b) 235, 89 (2003).

118. “Shallow donor state of hydrogen in indium nitride”, E. A. Davis, S. F. J. Cox, R. L. Lichti, and C. G. Van de Walle, Appl. Phys. Lett. 82, 592 (2003).

119. “Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells”, P. Kiesel, F. Renner, M. Kneissl, C. Van de Walle, G. H. Döhler, and N. M. Johnson, phys. stat. sol. 234, 742 (2002).

120. “Universal alignment of hydrogen levels in semiconductors, insulators, and solutions”, C. G. Van de Walle and J. Neugebauer, Nature 423, 626 (2003).

 

Book Chapters

  1. “Theory of isolated interstitial hydrogen and muonium in crystalline semiconductors”, C. G. Van de Walle, in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson, Semiconductors and Semimetals, Vol. 34, Treatise Editors R. K. Willardson and A. C. Beer (Academic Press, Boston, 1991), p. 585.
  2. “Hydrogen in crystalline semiconductors”, C. G. Van de Walle, in Deep Centers in Semiconductors, 2nd edition, edited by S. T. Pantelides (Gordon and Breach Science Publishers, Philadelphia, 1992), p. 899.
  3. “First-principles calculations of light emission from silicon-based materials”, C. G. Van de Walle and J. E. Northrup, in Porous Silicon, edited by Z. C. Feng and R. Tsu (World Scientific Publishing Co. Inc, Singapore, 1994), p. 329.
  4. “Doping of wide-band-gap II-VI semiconductors - Theory”, C. G. Van de Walle, in II-VI pn junction blue/green light emitters, edited by R. L. Gunshor and A. Nurmikko, Semiconductors and Semimetals, Vol. 44, Treatise Editors R. K. Willardson and A. C. Beer (Academic Press, Boston, 1997), p. 121.
  5. “Hydrogen in III-V nitrides”, Chris G. Van de Walle and N. M. Johnson, in Gallium Nitride (GaN) II, edited by J. I. Pankove and T. D. Moustakas, Semiconductors and Semimetals, Vol. 57, Treatise Editors R. K. Willardson and E. R. Weber (Academic Press, Boston, 1998), p. 157.
  6. “Hydrogen interaction with polycrystalline and amorphous silicon - theory”, Chris G. Van de Walle, in Hydrogen in Semiconductors II, edited by N. H. Nickel, Semiconductors and Semimetals, Vol. 61, Treatise Editors R. K. Willardson and E. R. Weber (Academic Press, Boston, 1999), p. 241.
  7. “Theory of hydrogen in GaN”, J. Neugebauer and C. G. Van de Walle, in Hydrogen in Semiconductors II, edited by N. H. Nickel, Semiconductors and Semimetals, Vol. 61, Treatise Eds. R. K. Willardson and E. R. Weber (Academic Press, Boston, 1999), p. 479.
  8. “Isolated monatomic hydrogen in silicon”, N. M. Johnson and Chris G. Van de Walle, in Hydrogen in Semiconductors II, edited by N. H. Nickel, Semiconductors and Semimetals, Vol. 61, Treatise Editors R. K. Willardson and E. R. Weber (Academic Press, Boston, 1999), p. 13.

9.      “Electrical Conductivity Control”, Chris G. Van de Walle, Chapter 3 in Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, edited by S. Nakamura and S. F. Chichibu (Taylor and Francis, London, 2000), pp. 67-103.

 

Review Articles

1.      “Strain effects on the valence-band structure of SiGe”; “Strain effects on the conduction-band structure of SiGe”; “SiGe heterojunctions and band offsets”; C. G. Van de Walle, in Properties of Strained and Relaxed SiGe, edited by E. Kasper, EMIS Datareview Series No. 12 (INSPEC, IEE, 1995), pp. 94-98, 99-102, 110-115.

2.      “Condensed-Matter Physics”, C. G. Van de Walle, in 1995 Yearbook of Science and the Future, edited by David Calhoun (Encyclopaedia Britannica, Chicago, 1994), p.405.

3.      “Heterojunction band offset engineering”, A. Franciosi and C. G. Van de Walle, Surface Science Reports Vol. 25, Nos. 1-4, pp. 1-140 (1996).

4.      “Native defects, impurities, and doping in GaN and related compounds: general remarks”; “Native point defects in GaN and related compounds”; “Yellow luminescence in GaN”; “Hydrogen and acceptor compensation in GaN”; C. G. Van de Walle et al., in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, EMIS Datareview Series No. 23 (INSPEC, IEE, 1999), pp. 275-280; 281-283; 313-316; 317-321.

5.      “Strain effects on the valence-band structure of SiGe”; “Strain effects on the conduction-band structure of SiGe”; “SiGe heterojunctions and band offsets”; C. G. Van de Walle, in Properties of Silicon Germanium and SiGe:Carbon, edited by E. Kasper and K. Lyutovich, EMIS Datareview Series No. 24 (INSPEC, IEE, 2000), pp. 135-139, 140-143, 149-157.

6.      “Point Defects and Impurities in III-Nitride Bulk and Thin Film Heterostructures”, C. G. Van de Walle, in Encyclopedia of Materials: Science and Technology Vol. 7, 7124 (Pergamon, Amsterdam, 2001).

 

 

Dissertation

“Theoretical studies of structure and band alignment at semiconductor interfaces”, C. G. Van de Walle, Ph. D. Dissertation, Stanford University (1986).

 

 

Conference Proceedings Edited

  1. Wide-Band-Gap Semiconductors: Proceedings of the Seventh Trieste Semiconductor Symposium, Trieste, Italy, June 8-12, 1992, edited by C. G. Van de Walle (Physica B, volume 185) (North-Holland, Elsevier Science Publishers, Amsterdam, 1993).
  2. Proceedings of the 20th International Conference on Defects in Semiconductors, Berkeley, California, July 26-30, 1999, edited by Chris G. Van de Walle and W. Walukiewicz (Physica B, volume 273-274) (North-Holland, Elsevier Science, Amsterdam, 1999).

 

Conference Proceedings Papers

1.      “Theoretical study of semiconductor interfaces”, C. G. Van de Walle and R. M. Martin, in Computer-Based Microscopic Description of the Structure and Properties of Materials, edited by J. Broughton, W. Krakow and S. T. Pantelides, Materials Research Society Symposia Proceedings, Vol. 63 (Materials Research Society, Pittsburgh, Pennsylvania, 1986), p. 21.

2.      “A simple model for intrinsic band offsets at semiconductor heterojunctions”, C. G. Van de Walle and R. M. Martin, in Proceedings of the 18th International Conference on the Physics of Semiconductors, edited by O. Engström (World Scientific Publishing Co Pte Ltd., Singapore 1987), p. 159.

3.      “Energy-dependence of the single-particle self-energy correction for various semiconductors”, W. B. Jackson, C. G. Van de Walle, J. W. Allen, and J. E. Northrup, in Proceedings of the 18th International Conference on the Physics of Semiconductors, edited by O. Engström (World Scientific Publishing Co Pte Ltd., Singapore 1987), p. 1111.

4.      “Band offsets at strained-layer interfaces”, C. G. Van de Walle, in Epitaxy of Semiconductor Layered Structures, edited by R. T. Tung, L. R. Dawson, and R. L. Gunshor, Materials Research Society Symposia Proceedings, Vol. 102 (Materials Research Society, Pittsburgh, Pennsylvania, 1988), p. 565.

5.      “Theory of hydrogen reactions in silicon”, C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides, in Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, and G. Davies, Materials Research Society Symposia Proceedings, Vol. 104 (Materials Research Society, Pittsburgh, Pennsylvania, 1988), p. 253.

6.      “Hydrogen diffusion and passivation of shallow impurities in crystalline silicon”, C. G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. Pantelides, in Proceedings of the Third International Conference on Shallow Impurities in Semiconductors, Linköping, 1988, edited by B. Monemar, IOP Conf. Ser. no. 95 (IOP London, 1989), p. 405.

7.      “Diffusion of shallow impurities in silicon”, C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, in Proceedings of the Third International Conference on Shallow Impurities in Semiconductors, Linköping, 1988, edited by B. Monemar, IOP Conf. Ser. no. 95 (IOP London, 1989), p. 493.

8.      “Fluorine-silicon reactions and the etching of crystalline silicon”, C. G. Van de Walle, F. R. McFeely, and S. T. Pantelides, in Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, 1988, edited by W. Zawadzki (Inst. of Physics, Polish Academy of Sciences, Warsaw, 1988), p. 789.

9.      “Diffusion and complex formation in boron-doped silicon”, P. J. H. Denteneer, C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, in Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, 1988, edited by W. Zawadzki (Inst. of Physics, Polish Academy of Sciences, Warsaw, 1988), p. 999.

10.  “Fluorine-silicon reactions and the etching of crystalline silicon”, C. G. Van de Walle, F. R. McFeely, and S. T. Pantelides, in Proceedings of the 15th International Conference on Defects in Semiconductors, Budapest, 1988, edited by G. Ferenczi, Mat. Sci. Forum 38-41, 335 (Trans Tech, Aedermannsdorf, 1989).

11.  “Hydrogen diffusion and passivation of shallow impurities in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, Y. Bar-Yam, and S. T. Pantelides, in Proceedings of the 15th International Conference on Defects in Semiconductors, Budapest, 1988, edited by G. Ferenczi, Mat. Sci. Forum 38-41, 979 (Trans Tech, Aedermannsdorf, 1989).

12.  “Fluorine-silicon reactions and the etching of crystalline silicon”, C. G. Van de Walle, F. R. McFeely, and S. T. Pantelides, in Atomic Scale Calculations in Materials Science, edited by J. Tersoff, D. Vanderbilt, and V. Vitek, Materials Research Society Symposia Proceedings, Vol. 141 (Materials Research Society, Pittsburgh, Pennsylvania, 1989), p. 425.

13.  “Enhanced and retarded diffusion of shallow impurities in silicon”, C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, in Atomic Scale Calculations in Materials Science, edited by J. Tersoff, D. Vanderbilt, and V. Vitek, Materials Research Society Symposia Proceedings, Vol. 141 (Materials Research Society, Pittsburgh, Pennsylvania, 1989), p. 243.

14.  “Electronic structure and hyperfine parameters for hydrogen and muonium in silicon”, C. G. Van de Walle, in Impurities, Defects, and Diffusion in Semiconductors, edited by J. Bernholc, E. E. Haller, and D. J. Wolford, Materials Research Society Symposia Proceedings, Vol. 163 (Materials Research Society, Pittsburgh, Pennsylvania, 1990), p. 419.

15.  “Atomic structure of CaSi2/Si interfaces”, C. G. Van de Walle, in Atomic Scale Structure of Interfaces, edited by R. D. Bringans, R. M. Feenstra, and J. M. Gibson, Materials Research Society Symposia Proceedings, Vol. 159 (Materials Research Society, Pittsburgh, Pennsylvania, 1990) p. 115.

16.  “Structure and hyperfine parameters of point defects in semiconductors”, C. G. Van de Walle and D. B. Laks, in Proceedings of the 20th International Conference on the Physics of Semiconductors, Thessaloniki, 1990, edited by E. Anastassakis and J. D. Joannopoulos (World Scientific Publishing Co Pte Ltd., Singapore), p. 722.

17.  “Li and native defects in ZnSe investigated by first-principles total-energy calculations”, D. B. Laks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, in Proceedings of the 20th International Conference on the Physics of Semiconductors, Thessaloniki, 1990, edited by E. Anastassakis and J. D. Joannopoulos (World Scientific Publishing Co Pte Ltd., Singapore), p. 654.

18.  “First-principles calculations of diffusion constants in silicon”, P. E. Blöchl, C. G. Van de Walle, and S. T. Pantelides, in Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology, Montreal, 1990, edited by G. R. Srinivasan, J. D. Plummer, and S. T. Pantelides, (The Electrochemical Society, Inc., Pennington, NJ), p. 190.

19.  “Native defect compensation in wide-band-gap semiconductors”, D. B. Laks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, in Proceedings of the 16th International Conference on Defects in Semiconductors, Lehigh University, Pennsylvania, 1991, edited by G. Davies, G. G. DeLeo, and M. Stavola, Mat. Sci. Forum 83-87, 1225 (Trans Tech, Zürich, 1991).

20.  “First-principles investigations of acceptors in ZnSe”, C. G. Van de Walle and D. B. Laks, in Wide Band-Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa, Materials Research Society Symposia Proceedings, Vol. 242 (Materials Research Society, Pittsburgh, Pennsylvania, 1992), p. 349.

21.  “Self-compensation and doping problems in ZnSe”, D. B. Laks and C. G. Van de Walle, in Wide Band-Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa, Materials Research Society Symposia Proceedings, Vol. 242 (Materials Research Society, Pittsburgh, Pennsylvania, 1992), p. 311.

22.  “First-principles investigations of hydrogen and fluorine on silicon surfaces”, C. G. Van de Walle, in Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, and G. W. Rubloff, Materials Research Society Symposia Proceedings, Vol. 259 (Materials Research Society, Pittsburgh, Pennsylvania), p. 375.

23.  “First-principles investigations of hydrogen, oxygen, and fluorine interactions with silicon”, C. G. Van de Walle, in Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Volume 93-6 (The Electrochemical Society, Pennington, NJ, 1993), p. 429-442.

24.  “Native defects and impurities in cubic and wurtzite GaN”, J. Neugebauer and C. G. Van de Walle, in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, Materials Research Society Symposia Proceedings, Vol. 339 (Materials Research Society, Pittsburgh, Pennsylvania, 1994), p. 687.

25.  “Defects and doping in GaN”, J. Neugebauer and C. G. Van de Walle, in Proceedings of the 22th International Conference on the Physics of Semiconductors, Vancouver, 1994, edited by D. J. Lockwood (World Scientific Publishing Co Pte Ltd., Singapore), p. 2327.

26.  “Isolated hydrogen in silicon – a large negative-U system”, N. M. Johnson, C. Herring, and C. G. Van de Walle, in Proceedings of the 22th International Conference on the Physics of Semiconductors, Vancouver, 1994, edited by D. J. Lockwood (World Scientific Publishing Co Pte Ltd., Singapore), p. 2227.

27.  “Hydrogen Interactions with Crystalline, Amorphous, Polycrystalline, and Porous Silicon”, C. G. Van de Walle, in Proceedings of the CAM-94 Physics Meeting (Joint Meeting of the Canadian Association of Physicists, the American Physical Society, and the Mexican Physical Society), edited by A. Zepeda, AIP Conference Proceedings Series, Vol. 342 (AIP Press, Woodbury, New York, 1995), p. 15.

28.  “Atomic hydrogen in GaN”, J. Neugebauer and C. G. Van de Walle, in Defect and Impurity Engineered Semiconductors and Devices, edited by S. Ashok, I. Akasaki, J. Chevallier, and N. M. Johnson, Materials Research Society Symposia Proceedings, Vol. 378 (Materials Research Society, Pittsburgh, Pennsylvania, 1995). p. 503.

29.  “Phase stability and electronic structure of GaAs1-xNx alloys”, J. Neugebauer and C. G. Van de Walle, in Strained Layer Epitaxy – Materials, Processing, and Device Applications, edited by E. Fitzgerald, K.-Y. Cheng, J. Hoyt, and J. Bean, Materials Research Society Symposia Proceedings, Vol. 379 (Materials Research Society, Pittsburgh, Pennsylvania, 1995). p. 3.

30.  “Theory of defects in wide-band-gap semiconductors”, C. G. Van de Walle and J. Neugebauer, in Defect and Impurity Engineered Semiconductors and Devices, edited by S. Ashok, I. Akasaki, J. Chevallier, and N. M. Johnson, Materials Research Society Symposia Proceedings, Vol. 378 (Materials Research Society, Pittsburgh, Pennsylvania, 1995). p. 467.

31.  “Silicon-hydrogen bonding and hydrogen diffusion in amorphous silicon”, in Amorphous Silicon Technology, edited by E. A. Schiff, M. Hack, A. Madan, and A. Matsuda, Materials Research Society Symposia Proceedings, Vol. 377 (Materials Research Society, Pittsburgh, Pennsylvania, 1995), p. 389.

32.  “Theory of point defects and complexes in GaN”, J. Neugebauer and C. G. Van de Walle, in Gallium Nitride and Related Materials, edited by R. D. Dupuis, J. A. Edmond, F. A. Ponce, and S. Nakamura, Materials Research Society Symposia Proceedings, Vol. 395 (Materials Research Society, Pittsburgh, Pennsylvania), p. 645.

33.  “Tight-binding initialization for generating high-quality initial wave functions: application to defects and impurities in GaN”, J. Neugebauer and C. G. Van de Walle, in Materials Theory, Simulations, and Parallel Algorithms, edited by E. Kaxiras, J. Joannopoulos, P. Vashishta, and R. K. Kalia, Materials Research Society Symposia Proceedings, Vol. 408 (Materials Research Society, Pittsburgh, Pennsylvania). p. 43.

34.  “Hydrogen in GaN”, N. M. Johnson, W. Götz, J. Neugebauer and C. G. Van de Walle, in Gallium Nitride and Related Materials, edited by R. D. Dupuis, J. A. Edmond, F. A. Ponce, and S. Nakamura, Materials Research Society Symposia Proceedings, Vol. 395 (Materials Research Society, Pittsburgh, Pennsylvania, 1996), p. 723.

35.  “Hydrogen diffusion and complex formation in GaN”, J. Neugebauer, W. Götz, and Chris G. Van de Walle, in Proceedings of the 6th International Conference on SiC and Related Materials, Kyoto, Japan, Sept. 18-21, 1995, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, Inst. Phys. Conf. Ser. No 142 (IOP Publishing, Bristol, 1996), p. 1035.

36.  “New model for “stretched exponential” relaxation”, Chris G. Van de Walle, in Amorphous Silicon Technology, edited by M. Hack, R. Schropp, E. A. Schiff, A. Matsuda, and S. Wagner, Materials Research Society Symposia Proceedings, Vol. 420 (Materials Research Society, Pittsburgh, Pennsylvania, 1996), p. 533.

37.  “Role of hydrogen and hydrogen complexes in doping of GaN”, J. Neugebauer and Chris G. Van de Walle, in III-Nitride, SiC, and Diamond Materials for Electronic Devices, edited by D. K. Gaskill, C. Brandt, and R. J. Nemanich, Materials Research Society Symposia Proceedings, Vol. 423 (Materials Research Society, Pittsburgh, Pennsylvania, 1996), p. 619.

38.  “Role of defects and impurities in doping of GaN”, J. Neugebauer and Chris G. Van de Walle, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific Publishing Co Pte Ltd., Singapore, 1996), p. 2849.

39.  “Theory of point defects and interfaces”, Chris G. Van de Walle and J. Neugebauer , in III-V Nitrides, edited by F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar, Materials Research Society Symposia Proceedings, Vol. 449 (Materials Research Society, Pittsburgh, Pennsylvania, 1997), p. 861.

40.  “Defects and doping in III-V nitrides”, Chris G. Van de Walle and J. Neugebauer, in Proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, 1997, edited by G. Davies and M. H. Nazaré, Mat. Sci. Forum 258-263, (Trans Tech, Zürich, 1997), p. 19.

41.  “Theoretical study of native point defects in AlN and InN”, C. Stampfl and Chris G. Van de Walle, in Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, and S. Strite, Materials Research Society Symposia Proceedings, Vol. 482 (Materials Research Society, Pittsburgh, Pennsylvania, 1998), p. 905.

42.  “Defects, doping and interfaces in III-V nitrides”, Chris G. Van de Walle, in Physics and Simulation of Optoelectronic Devices VI, edited by M. Osinski, P. Blood, and A. Ishibashi, SPIE Proc. Volume 3283 (SPIE, Bellingham, 1998), p. 52.

43.  “Theory of hydrogen in semiconductors”, C. G. Van de Walle, in Hydrogen in Semiconductors and Metals, edited by R. C. Bowman, W. B. Jackson, R. G. Leisure, and N. H. Nickel, MRS Symposia Proceedings, Vol. 513 (MRS, Pittsburgh, Pennsylvania, 1998), p. 55.

44.  “Evidence for oxygen DX centers in AlGaN”, M. D. McCluskey, N. M. Johnson, C. G. Van de Walle, D. P. Bour, M. Kneissl, and W. Walukiewicz, in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, edited by S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Materials Research Society Symposia Proceedings, Vol. 512 (MRS, Pittsburgh, Pennsylvania, 1998), p. 531.

45.   “Doping of AlGaN alloys”, Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, GaN and Related Alloys, edited by C. R. Abernathy and B. Monemar, Materials Research Society Symposia Proceedings, Vol. 537 (Materials Research Society, Pittsburgh, Pennsylvania, 1998); MRS Internet J. Nitride Semicond. Res. 4S1, G10.4 (1999).

46.  “Theory of hydrogen interactions with amorphous silicon”, Chris G. Van de Walle and B. Tuttle, in Amorphous and Heterogeneous Silicon Thin Films -- Fundamentals to Devices, edited by H. M. Branz, R. W. Collins, H. Okamoto, S. Guha, and R. Schropp, MRS Symposia Proceedings, Vol. 557 (MRS, Pittsburgh, Pennsylvania, 1999), p. 275.

47.  “New insights in doping of III-nitrides and their alloys”, Chris G. Van de Walle and J. Neugebauer, in Proceedings of the 26th International Symposium on Compound Semiconductors, edited by K. H. Ploog, G. Tränkle, and G. Weimann, Inst. Phys. Conf. Ser. No. 166, p. 439 (2000).

48.  “Theory of impurities and defects in III-nitrides: Vacancies in GaN and related materials”, Chris G. Van de Walle, in Proceedings of the International Conference on Silicon Carbide and Related Materials, Raleigh, North Carolina, 1999, edited by C. H. Carter, Jr., R. P. Devaty, and G. S. Rohrer, Mat. Sci. Forum 338-342 (Trans Tech, Zürich, 2000), p. 1561.

49.  “Controlling the conductivity of wide-band-gap semiconductors”, Chris G. Van de Walle and J. Neugebauer, in Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka, 2000, edited by N. Miura and T. Ando (Springer, Berlin, 2001), p. 3.

50.  “Stability, diffusion, and complex formation of beryllium in wurtzite GaN”, S. Limpijumnong, C. G. Van de Walle, and J. Neugebauer, in GaN and Related Alloys, edited by U. Mishra, M. S. Shur, C. M. Wetzel, B. Gil, and K. Kishino, Materials Research Society Symposium Proceedings, Vol. 639, G4.3 (2001).

51.   “Performance characteristics of cw InGaN multiple-quantum-well laser diodes”, M. Kneissl, W. S. Wong, C. G. Van de Walle, J. E. Northrup, D. W. Treat, M. Teepe, N. Miyashita, P. Kiesel, and N. M. Johnson, in GaN and Related Alloys, edited by U. Mishra, M. S. Shur, C. M. Wetzel, B. Gil, and K. Kishino, Materials Research Society Symposium Proceedings, Vol. 639, G10.6 (2001).

52.  “Vibrational spectroscopy of GaN:Mg under pressure'', M. D. McCluskey, K. K. Zhuravlev, M. Kneissl, W. Wong, D. Treat, S. Limpijumnong, C. G. Van de Walle, and N. M. Johnson, in GaN and Related Alloys, edited by J. E. Northrup, J. Neugebauer, S. F.  Chichibu, D. C. Look, and H. Riechert, Materials Research Society Symposium Proceedings, Vol. 693, I2.4 (2002).

53.   “Novel configuration of Mg-H complexes in GaN”, S. Limpijumnong, J. E. Northrup, and C. G. Van de Walle, in GaN and Related Alloys, edited by J. E. Northrup, J. Neugebauer, S. F.  Chichibu, D. C. Look, and H. Riechert, Materials Research Society Symposium Proceedings, Vol. 693, I2.5 (2002).

54.  “Effects of stoichiometry on point defects and impurities in gallium nitride”, C. G. Van de Walle, J. E. Northrup, and J. Neugebauer, in Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, October 2-4, 2002, edited by P. Specht, T. R. Weatherford, P. Kiesel, T. Marek, and S. Malzer, p. 11.

 

Patents

1.      “TM-polarized laser emitter using III-V alloy with nitrogen”, C. G. Van de Walle and D. P. Bour, U. S. Patent No. 5,383,211 (1995).

2.      “Dual polarization quantum well laser in the 200 to 600 nanometers range”, C. G. Van de Walle, U. S. Patent No. 5,828,684 (1998).

3.      “Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides”, C. G. Van de Walle, U.S. Patent No. 6,121,639 (2000).

4.      “Light-emitting devices including polycrystalline GaN layers and method of forming devices”, N. H. Nickel, C. G. Van de Walle, D. P. Bour, and P. Mei, U.S. Patent Number 6,288,417 (2001).

5.      “Structure and method for asymmetric waveguide nitride laser diode”, C. G. Van de Walle, D. P. Bour, M. A. Kneissl, and L. T. Romano, U.S. Patent Number 6,389,051 (2002).

6.      “Structure and method for asymmetric waveguide nitride laser diode”, C. G. Van de Walle, D. P. Bour, M. A. Kneissl, and L. T. Romano, U.S. Patent Number 6,430,202 (2002).

7.      “Semiconductor device and method of forming a semiconductor device”, J. E. Northrup and C. G. Van de Walle, U.S. Patent Number 6,437,374 (2002).

8.      “Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection”, M. Kneissl, P. Kiesel, and C. G. Van de Walle, U.S. Patent Number 6,515,308 (2003).

9.      “Method for forming an asymmetric nitride laser diode”, C. G. Van de Walle, D. P. Bour, M. A. Kneissl, and L. T. Romano, U.S. Patent Number 6,541,292 B2 (4/1/03).

10.  “Structure and method for self-aligned, index-guided, buried heterostructure AlGaInN laser diodes”, D. Bour, M. Kneissl, L. Romano, T. L. Paoli, and C. G. Van de Walle, U.S. Patent Number 6,567,443 (5/20/03).

11.  “Structure and method for index-guided buried heterostructure AlGaInN laser diodes”, D. Bour, M. Kneissl, L. Romano, T. L. Paoli, and C. G. Van de Walle, U.S. Patent Number 6,570,898 (5/27/03).

12.  “Distributed feedback laser fabricated by lateral overgrowth of an active region”, D. Hofstetter, T. L. Paoli, L. T. Romano, D. Sun, D. P. Bour, M. A. Kneissl, C. G. Van de Walle, and N. M. Johnson, U.S. Patent Number 6,574,256 (2003).

13.  “Semiconductor device and method of forming a semiconductor device”, J. E. Northrup and C. G. Van de Walle, U.S. Patent Number 6,583,449 (2003).

 

Five patents pending.

 

 

INVITED CONFERENCE PRESENTATIONS

Chris G. Van de Walle

 

  1. “Hydrogen in crystalline silicon”, Sixth International Conference on Deep Impurity Levels, Santa Margherita di Pula, Sardinia, Italy, September 22-25, 1987.
  2. “Hydrogen diffusion and reactions in crystalline silicon”, Workshop on Computational Condensed Matter Physics, Glion-sur-Montreux, Switzerland, February 24-26, 1988.
  3. “Theory of hydrogen diffusion and reactions in crystalline silicon”, March Meeting of the American Physical Society, New Orleans, Louisiana, March 21-25, 1988.
  4. “Physics of heterojunctions”, IMEC Summer Course on Physics of Advanced Microdevices, Leuven, Belgium, June 13-16, 1988.
  5. “The model solid theory for heterojunction band offsets”, CECAM Workshop on Calculation of Electronic, Structural, and Lattice-Dynamical Properties of Semiconductor Interfaces and Superlattices, CECAM, Université Paris - Sud, France, June 20-July 1, 1988.
  6. “Hydrogen diffusion and passivation of shallow impurities in crystalline silicon”, Third International Conference on Shallow Impurities in Semiconductors, Linköping, Sweden, August 10-12, 1988.
  7. “Theory of hydrogen diffusion and reactions in crystalline semiconductors”, Workshop on Hydrogen Passivation of Dopants and Defects in III-V Compounds and their Alloys, Universités Pierre & Marie Curie and Paris 7, Paris, France, Nov. 3-4, 1988.
  8. “Fluorine-silicon reactions and the etching of crystalline silicon”, Fall Meeting of the Materials Research Society, Boston, Massachusetts, November 28-December 3, 1988.
  9. “Theoretical aspects of hydrogen in crystalline semiconductors”, Sixth Trieste Semiconductor Symposium: Hydrogen in Semiconductors, International Center for Theoretical Physics, Trieste, Italy, August 27-31, 1990.
  10. “Structure and energy of interstitial hydrogen and hydrogen-related complexes in crystalline semiconductors”, Workshop on Hydrogen Migration and the Stability of Hydrogen Related Complexes in Crystalline Semiconductors, Freiburg, Germany, November 3-6, 1991.
  11. “First-principles investigations of hydrogen and fluorine on silicon surfaces”, Spring Meeting of the Materials Research Society, San Francisco, California, April 27-May 1, 1992.
  12. “Solubility, defect reactions, and doping limits in ZnSe”, Gordon Research Conference on Point Defects, Line Defects, and Interfaces in Semiconductors, Plymouth, NH, July 20-24, 1992.
  13. “First-principles investigations of hydrogen and fluorine interactions with silicon” (keynote talk), First International Symposium on Ultra Clean Processing of Silicon Surfaces, Leuven, Belgium, September 17-19, 1992.

14.  “First-principles calculations of light emission from Si-based materials”, March Meeting of the American Physical Society, Seattle, Washington, March 22-26, 1993.

  1. “First-principles investigations of hydrogen, oxygen, and fluorine interactions with silicon”, Third International Symposium on Process Physics and Modeling in Semiconductor Technology, 183rd Meeting of the Electrochemical Society, Honolulu, Hawaii, May 16-21, 1993.
  2. “Solubilities, compensation, and doping limits in compound semiconductors”, European Research Conference on Electronic Structure of Solids, Porto Carras, Greece, September 18-23, 1993.
  3. “Nitrogen doping in ZnTe and ZnSe”, Sixth International Conference on Shallow Level Centers in Semiconductors, Berkeley, CA, August 10-12, 1994.
  4. “Defects, impurities, and doping levels in semiconductors”, 5th Italian-Swiss Workshop on Computational Condensed Matter Physics, Santa Margherita di Pula, Sardinia, Italy, September 8-13, 1994.
  5. “Hydrogen Interactions with Crystalline, Amorphous, Polycrystalline, and Porous Silicon”, CAM 94: Joint Meeting of the Canadian Association of Physicists, the American Physical Society, and the Mexican Physical Society, Cancun, Mexico, September 26-30, 1994.
  6. “Theory of defects in wide-band-gap semiconductors”, Spring Meeting of the Materials Research Society, San Francisco, California, April 17-21, 1995.
  7. “Theory of defects in semiconductors”, Fifth Conference on Computational Research on Materials, Morgantown, West Virginia, May 3-5, 1995.
  8. “Theory of doping in wide-band-gap semiconductors”, Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton University, New Jersey, June 26-30, 1995.
  9. “Defects, impurities and doping in GaN”, March Meeting of the American Physical Society, St. Louis, Missouri, March 18-22, 1996.
  10. “Defects, impurities, and doping in gallium nitride”, Spring Meeting of the Materials Research Society, San Francisco, California, April 8-12, 1996.
  11. “Hydrogen in GaN: Novel aspects of a common impurity”, 160. WE-Heraeus Seminar: Hydrogen in Solids and at Solid Surfaces, Ilmenau, Germany, May 30-June 1, 1996.
  12. “Theory of point defects and interfaces”, Fall Meeting of the Materials Research Society, Boston, Massachusetts, December 2-6, 1996.
  13. “Defects and doping in GaN”, 8th Brazilian Workshop on Semiconductor Physics, São Paulo, Brazil, February 2-7, 1997.
  14. Plenary talk: “Defects and doping in III-V nitrides”, 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 21-25, 1997.
  15. “Hydrogen states in silicon”, 17th International Conference on Amorphous and Microcrystalline Semiconductors, Budapest, Hungary, August 25-29, 1997.
  16. “Hydrogen in silicon: fundamental properties and consequences for devices”, 44th National Symposium of the American Vacuum Society, San Jose, California, October 20-24, 1997.
  17. “Theory of doping and defects in III-V nitrides”, Second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27-31, 1997.
  18. “Interfaces and band offsets in III-nitrides”, International GaN Workshop, Schloss Ringberg, Rottach-Egern, Germany, January 20-24, 1998
  19. “Defects, doping and interfaces in III-V nitrides”, Photonics West Optoelectronics '98, San Jose, California, January 24-30, 1998.
  20. “Blue lasers: materials growth, characterization, and computational physics”, Workshop on “Science and Mathematical Science: Exploring the Interface”, National Research Council, Washington, DC, March 25-26, 1998.
  21. “Theory of hydrogen in semiconductors”, Spring Meeting of the Materials Research Society, San Francisco, California, April 12-17, 1998.
  22. “First-principles calculations of energetics and dissociation of Si-H bonds”, Workshop on the Role of Hydrogen and Deuterium in Hot Electron Semiconductor Device Degradation, Urbana, Illinois, April 20-21, 1998.
  23. “Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors”, Spring Meeting of the European Materials Research Society, Strasbourg, France, June 16-19, 1998.
  24. “III-V nitrides: successes and challenges”, Deutsche Forschungsgemeinschaft Colloquium on “Group III Nitrides and their Heterostructures”, Bad Honnef, Germany, October 26-27, 1998.
  25. “Doping of AlGaN alloys”, Fall Meeting of the Materials Research Society, Boston, Massachusetts, November 30 - December 4, 1998.
  26. “Theory of hydrogen interactions with amorphous silicon”, Spring Meeting of the Materials Research Society, San Francisco, California, April 5-9, 1999.
  27. “Interactions of hydrogen with silicon and consequences for devices”, Workshop on Hydrogen in Semiconductors, Exeter, England, April 15-16, 1999.
  28. “Defects and Defect Reactions in Semiconductor Nitrides”, XXVIII International School on Physics of Semiconducting Compounds, Jaszowiec, Poland, June 7-11, 1999.
  29. “Effect of native point defects on nitride materials and devices”, Electronic Materials Conference, Santa Barbara, California, June 30-July 2, 1999.
  30. “New insights in doping of III-nitrides and their alloys”, International Symposium on Compound Semiconductors, Berlin, Germany, August 22-26, 1999.
  31. “Theory of impurities and defects in III-nitrides”, International Conference on Silicon Carbide and Related Materials, Raleigh, North Carolina, October 10-15, 1999.
  32. “First-principles calculations of defects and impurities in GaN, AlN, and InN”, Workshop on “Advances in First-Principles Computational Condensed Matter Physics”, Miraflores de la Sierra (Madrid), Spain, January 13-15, 2000.
  33. “First-principles studies of defects and impurities in nitride semiconductors”, “Fifteen Years of the Car-Parrinello Method in Physics and Chemistry”, Minneapolis, Minnesota, March 18-19, 2000.
  34. “Hydrogen diffusion and metastability in hydrogenated amorphous silicon”, CECAM Workshop on Electronic and Optical Properties of Semiconducting Glasses, Lyon, France, June 13-16, 2000.
  35. “Sources of n-type conductivity in ZnO”, Gordon Research Conference on Point & Line Defects in Semiconductors, Colby-Sawyer College, New London, NH, July 9-14, 2000.
  36. “Properties of GaN surfaces: the role of hydrogen”, Yk 2000 Conference: “Ab initio calculations of complex processes in materials”, Schwäbisch Gmünd, Germany, August 22-26, 2000.
  37. Plenary talk: “Controlling the conductivity of wide-band-gap semiconductors”, 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000.
  38. “Role of hydrogen in surface reconstructions and growth of GaN”, Fall Meeting of the Materials Research Society, Boston, Massachusetts, November 26 - December 1, 2000.
  39. “Hydrogen as a cause of doping in ZnO”, March Meeting of the American Physical Society, Seattle, Washington, March 12-16, 2001.
  40. “Dopant engineering in wide-band-gap semiconductors”, WideGap 2001: Doping Issues in Wide-Band-Gap Semiconductors, Exeter, England, March 21-23, 2001.
  41. “Defect analysis and engineering in ZnO”, 21st International Conference on Defects in Semiconductors, Giessen, Germany, July 16-20, 2001.
  42. “Strategies for controlling the conductivity of wide-band-gap semiconductors”, 10th International Conference on II-VI Compounds, Bremen, Germany, September 9-14, 2001.
  43. “Role of hydrogen in surface reconstructions and growth of GaN”, 29th International Conference on Physics in Semiconductors, Santa Fe, New Mexico, January 6-10, 2002.
  44. Adler Award Lecture: “The fascinating physics of hydrogen in semiconductors and oxides”, March Meeting of the American Physical Society, Indianapolis, Indiana, March 18-22, 2002.
  45. “Defect and Impurity Engineering in ZnO”, Spring Meeting of the Materials Research Society, San Francisco, California, April 1-5, 2002.
  46. “Defects and doping in wide-band-gap semiconductors”, 19th General Conference of the Condensed Matter Division of the European Physical Society, Brighton, United Kingdom, April 7-11, 2002.
  47. “Structure and energetics of nitride surfaces under MOCVD growth conditions”, 11th International Conference on Metal-Organic Vapour Phase Epitaxy, Berlin, Germany, June 3-7, 2002.

 

 

  1. “Hydrogen as a shallow center in semiconductors and oxides”, 10th International Conference on Shallow Level Centers in Semiconductors, Warsaw, Poland, July 24-27, 2002.
  2. “Materials and device design of nitride-based blue lasers”, Second International Conference on Numerical Simulation of Optoelectronic Devices, Zürich, Switzerland, September 25-27, 2002.
  3. “Effects of stoichiometry on point defects and impurities in GaN”, Fourth Symposium on Non-Stoichiometric III-V Compounds, Asilomar, California, October 2-4, 2002.
  4. “Hydrogen as a shallow center in semiconductors and oxides”, International Workshop on Hydrogen in Materials and Vacuum Systems, Newport News, Virginia, November 11-13, 2002.
  5. “Effects of hydrogen in devices”, Twenty-Five Years of Ultra-Small Electronics Research, Hapuna Beach, Hawaii, November 29, 2002.
  6. “Structure and energetics of nitride surfaces under realistic growth conditions’, March Meeting of the American Physical Society, Austin, Texas, March 3-7, 2003.
  7. “Role of hydrogen in doping of wide-band-gap semiconductors”, First NIMS (National Institute for Materials Science) International Conference: Materials Solutions for Photonics, Tsukuba, Japan, March 17-19, 2003.